j. {s e.\i,u ij-'ioaueti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SA1096 description ? high collector-emitter breakdown voltage- v(br)ceo= -50v (min) ? good linearity of hfe ? complement to type 2sc2497 applications ? designed for low-frequency power amplification absolute maximum ratings(ta=25'c) 1 pin 1.bmitter 2.collector 3. base to-126 package symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ ta=25-c total power dissipation @ tc=25'c junction temperature storage temperature range value -70 -50 -5 -2 -3 1.2 5 150 -55-150 unit v v v a a w "c 'c h" r i , h - t d^. - ?? g 1 -b-> & , f * i g ? rsrj ^^^^ 2 3 dim a b c d f g h j k 0 r v "r ; o :t v ? ? 3 m men 10,70 7,70 2.60 0.66 3.10 4.43 2.00 1.35 15.30 3.70 0.40 1.17 _ pj t a j !^ k in max 10.95 7.90 2.80 0.36 3.30 4.68 2.20 1.55 16.30 3.90 0,60 1.37 -!*- i ?i -4 r? j ? r nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. intbrmation furnished by nj semi-conductors is believed to be both accurate and reliable at the time ofgoing to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA1096 electrical characteristics tc=25c unless otherwise specified symbol v(6r)ceo v(br)cbo vce(sat) vee(sat) icbo iceo iebo hfe fi cob parameter collector-emitter breakdown voltage collector-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product output capacitance conditions lc= -2ma; ib= 0 lc=-1ma; ie=0 ic=-1.5a;ib=-0.15a ic=-1.5a;ib=-0.15a vcb= -20v; ie= 0 vce=-10v; ib=0 veb= -5v; lc= 0 lo=-1a;voe=-5v ie= 0.5a; vcb= -5v; f= 200mhz |e=o;vcb= -20v; f= 1.0mhz min -50 -70 80 typ. 150 55 max -1.0 -1.5 -1 -100 -10 220 unit v v v v ma ua u a mhz pf classifications q 80-160 r 120-220
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